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Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface

https://doi.org/10.1016/j.jallcom.2022.168315

Polyakov, A.Y.; Nikolaev, V.I.; Pechnikov, A.I.; Yakimov, E.B.; Karpov, S. Yu.; Stepanov, S.I.; Shchemerov, I.V.; Vasilev, A.A.; Chernykh, A.V.; Kuznetsov, A.; et al (March 2023, Journal of Alloys and Compounds)

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Transport and trap states in proton irradiated ultra-thick κ-Ga2O3

https://doi.org/10.1116/6.0002673

Polyakov, A. Y.; Nikolaev, V. I.; Pechnikov, A. I.; Yakimov, E. B.; Lagov, P. B.; Shchemerov, I. V.; Vasilev, A. A.; Kochkova, A. I.; Chernykh, A. V.; Lee, In-Hwan; et al (May 2023, Journal of Vacuum Science & Technology A)

Changes induced by irradiation with 1.1 MeV protons in the transport properties and deep trap spectra of thick (>80 μm) undoped κ-Ga2O3 layers grown on sapphire are reported. Prior to irradiation, the films had a donor concentration of ∼1015 cm−3, with the two dominant donors having ionization energies of 0.25 and 0.15 eV, respectively. The main electron traps were located at Ec−0.7 eV. Deep acceptor spectra measured by capacitance-voltage profiling under illumination showed optical ionization thresholds near 2, 2.8, and 3.4 eV. The diffusion length of nonequilibrium charge carriers for ɛ-Ga2O3 was 70 ± 5 nm prior to irradiation. After irradiation with 1.1 MeV protons to a fluence of 1014 cm−2, there was total depletion of mobile charge carriers in the top 4.5 μm of the film, close to the estimated proton range. The carrier removal rate was 10–20 cm−1, a factor of 5–10 lower than in β-Ga2O3, while the concentration of deep acceptors in the lower half of the bandgap and the diffusion length showed no significant change.
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Electric field dependence of major electron trap emission in bulk β-Ga ₂ O ₃ : Poole–Frenkel effect versus phonon-assisted tunneling

https://doi.org/10.1088/1361-6463/ab87c1

Polyakov, A. Y.; Lee, In-Hwan; Smirnov, N. B.; Shchemerov, I. V.; Vasilev, A. A.; Chernykh, A. V.; Pearton, S. J. (June 2020, Journal of Physics D: Applied Physics)
Investigating Temporal Control in Photoinduced Atom Transfer Radical Polymerization

https://doi.org/10.1021/acs.macromol.0c00888

Dadashi-Silab, Sajjad; Lee, In-Hwan; Anastasaki, Athina; Lorandi, Francesca; Narupai, Benjaporn; Dolinski, Neil D.; Allegrezza, Michael L.; Fantin, Marco; Konkolewicz, Dominik; Hawker, Craig J.; et al (July 2020, Macromolecules)

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Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga ₂ O ₃

https://doi.org/10.1088/1361-6463/ab83c4

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Vasilev, A. A.; Yakimov, E. B.; Chernykh, A. V.; Kochkova, A. I.; Lagov, P. B.; Pavlov, Yu S.; Kukharchuk, O. F.; et al (May 2020, Journal of Physics D: Applied Physics)
Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga ₂ O ₃

https://doi.org/10.1063/5.0058555

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Vasilev, A. A.; Kochkova, A. I.; Chernykh, A. V.; Lagov, P. B.; Pavlov, Yu. S.; Stolbunov, V. S.; Kulevoy, T. V.; et al (July 2021, Journal of Applied Physics)

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